lx5512b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2004 rev. 1.0b, 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? description the lx5512b is a power amplifier optimized for wlan applications in the 2.4-2.5 ghz frequency range. the pa is implemented as a three- stage monolithic microwave integrated circuit (mmic) with active bias and input/output pre-matching. the device is manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) ic process (mocvd). it operates at a single low voltage supply of 3.3v with 32 db power gain between 2.4-2.5ghz, at a low quiescent current of 65ma. for 19dbm ofdm output power (64qam, 54mbps), the pa provides a low evm (error-vector magnitude) of 3%, and consumes 140ma total dc current. the lx5512b is available in a 16- pin 3mmx3mm micro-lead package (mlp). the compact footprint, low profile, and excellent thermal capability of lx5512b meets th e requirements of high-gain power amplifiers for ieee 802.11b/g applications. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features ? advanced ingap hbt ? 2.4-2.5ghz operation ? single-polarity 3.3v supply ? low quiescent current i cq ~65ma ? power gain ~ 32 db at 2.45ghz & pout=19dbm ? total current ~140ma for pout=19dbm at 2.45 ghz ofdm ? evm ~3 % for 64qam/ 54mbps & pout=19dbm ? small footprint: 3x3mm2 ? low profile: 0.9mm applications ? ieee 802.11b/g product highlight package order info lq plastic mlpq 16 pin rohs compliant / pb-free LX5512BLQ note: available in tape & reel. append the letters ?tr? to the part number. (i.e. LX5512BLQ-tr) this device is classified as esd level 0 in accordance with jesd22-a114-b, (hbm) testing. appropriate esd procedures should be observed when handling this device. l l x x 5 5 5 5 1 1 2 2 b b
lx5512b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2004 rev. 1.0b, 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? absolute maximum ratings dc supply voltage, rf off...................................................................................................... 7v collector current.............................................................................................................. 500ma total power dissipation ........................................................................................................ .2w rf input power ................................................................................................................. . 5dbm operation ambient temperature ............................................................................ -40 to +85 o c storage temperature............................................................................................ -65 to +150 o c package peak temp for solder reflow (40 seconds maximum exposure)..........260c(+0, -5) note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal . thermal data lq plastic mlpq 16-pin thermal resistance - junction to c ase , jc 10 c/w thermal resistance - junction to a mbient , ja 50 c/w junction temperature calculation: t j = t a + (p d x ja ). the ja numbers are guidelines for the thermal performan ce of the device/pc-board system. all of the above assume no ambient airflow. package pin out e 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 vc3 rf out rf out det ref vb3 vb12 vcc n/c rf in n/c n/c n/c vc2 n/c vc1 lq p ackage (bottom view) rohs / pb-free 100% matte tin lead finish functional pin description name description rf in rf input for the power amplifier. this pin is directly connected to base, a 10pf decoupling capacitor may be needed. vb12 bias current control volta ge for the first and second stage. vb3 bias current control voltage for t he third stage. the vb3 pin can be co nnected with the first and second stage control voltage (vb12) into a single reference voltage (referred to as v ref ) through an external resistor bridge. vcc supply voltage for the bias reference and control circuits. the vcc feed line should be terminated with a 10nf bypass capacitor close to connector pin. this pin can be combined with vc1, vc2 and vc3 pins, resulting in a single supply voltage (referred to as v c ). rf out rf output for the power amplifier. this pin is dc- decoupled from the transistor collector of the third stage. vc1 power supply for first stage amplifier. the vc1 feed li ne should be terminated with a 10pf bypass capacitor, followed by a 36 ohm resistor. this pin can be combined with vc2,vc3 and vcc pins, resulting in a single supply voltage (referred to as v c ). vc2 power supply for second stage amplifier. the vc2 feed line should be terminated with a 18pf bypass capacitor. this pin can be combined with vc1,vc3 and vcc pins, resulting in a single supply voltage (referred to as v c ). vc3 power supply for the third stage amplifier. the vc3 feed line should be terminated with 27 pf and 10 nf bypass capacitors. this pin can be combined with vc1,vc2 and v cc pins, resulting in a single supply voltage (referred to as v c ). ref power detector reference output pin should be terminated with a p p a a c c k k a a g g e e d d a a t t a a
lx5512b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2004 rev. 1.0b, 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? electrical characteristics test conditions: v c = 3.3v, v ref = 2.95v, i cq = 65ma, t a = 25c lx5512b parameter symbol test conditions min typ max units frequency range f 2.4 2.5 ghz power gain @ p out = 19dbm gp 32 db evm @ p out = 19dbm 64qam / 54mbps 3.0 % total current @ p out = 19dbm i c_total 140 ma quiescent current i cq 65 ma bias control reference current i ref for i cq = 65ma 1.8 ma small-signal gain s21 32 db gain flatness note: all measured data was obtained on a 10mil getek evaluation board without heat sink. e e l l e e c c t t r r i i c c a a l l s s
lx5512b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2004 rev. 1.0b, 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? application schematic & bill of materials recommended bom location value c1 c2,c3,c9 1f (0603) 10nf(0402) c4 2pf (0402) c5,c8 10pf (0402) c6 c7 18pf (0402) 27pf (0402) r1 r2 r3,r4 tl1 tl2 tl3 tl4 tl5 75 ? (0402) 36 ? (0402) 100 k ? (0402) 120/10 mil (l/w) 100/8 mil (l/w) ~350/8 mil (l/w) 40/8 mil (l/w) ~500/8 mil (l/w) substrate 10 mil getek r = 3.9, tan = 0.01 50 ? microstrip width: 20 mil evaluation board (10 mil getek pcb, 0.9?x0.9?, no heat sink) e e v v a a l l u u a a t t i i o o n n
lx5512b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 copyright ? 2004 rev. 1.0b, 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? s-parameter data evm & supply current 50 40 30 20 10 0 -10 -20 -30 -40 -50 01234567 db(s(2,2)) db(s(1,1)) db(s(1,2)) db(s(2,1)) frequency (ghz) m1 m2 m3 m1 freq = 2.40ghz m1 = 32.02 m2 freq = 2.50ghz m2 = 31.46 m3 freq = 2.45ghz m3 = -9.31 v c = 3.3v, v ref = 2.95v, i cq = 65ma 0246810121416182022 evm pa /[%] current /[ma] output power /[dbm] 7 6 5 4 3 2 1 0 175 150 125 100 75 50 25 0 current 3.3v evm pa only evm and supply current with 54mbps 64qam v c = 3.3v, v ref = 2.95v, i cq = 65ma, frequency = 2.45ghz acp & diff detector voltage current @ 11mbps cck -44 -46 -48 -50 -52 -54 -56 0246810121416182022 0 0.5 1.0 1.5 2.0 2.5 3.0 acp /[db] output power /[dbm] acp 30mhz diff det voltage acp (30mhz) & differential detector voltage with 54mbps 64qam v c = 3.3v, v ref = 2.95v, i cq = 65ma, frequency = 2.45ghz 250 0 0246810121416182022 current /[ma] output power /[dbm] 24 25 50 75 100 125 150 175 200 225 current 3.3v v c = 3.3v, v ref = 2.95v, i cq = 65ma, frequency = 2.45ghz 23dbm output @ 11mbps cck v c = 3.3v, v ref = 2.95v, i cq = 65ma, frequency = 2.45ghz c c h h a a r r t t s s
lx5512b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 6 copyright ? 2004 rev. 1.0b, 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? package dimensions lq 16-pin mlpq 3x3 e d e b e2 d2 a a3 a1 l k pin 1 indicator or or or e d e b e2 a a1 l k d2 l1 m illimeters i nches dim min max min max a 0.80 1.00 0.031 0.039 a1 0 0.05 0 0.002 a3 0.20 ref 0.008 ref b 0.18 0.30 0.007 0.012 d 3.00 bsc 0.118 bsc e 3.00 bsc 0.118 bsc e 0.50 bsc 0.020 bsc d2 1.30 1.55 0.051 0.061 e2 1.30 1.55 0.051 0.061 k 0.2 - 0.008 - l 0.35 0.50 0.012 0.020 l1 - 0.15 - 0.006 note: 1. dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006?) on any side. lead dimension shall not include solder coverage. 2. due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. package type will be consistent within the smallest individual container. m m e e c c h h a a n n i i c c a a l l s s
lx5512b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 7 copyright ? 2004 rev. 1.0b, 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? tape and reel tape and reel specification 4.00mm 1.75mm 5.5 0.05mm 3.30mm ? 1.50mm ? 1.50mm 12.00 0.3mm 1.10mm 0.30mm part orientation top view side view 3.30mm 8.00mm 10.6mm ? 13mm +1.5 -0.2 ? 330mm 0.5 ? 97mm 1.0 2.2mm 13mm +1.5 m m e e c c h h a a n n i i c c a a l l s s
lx5512b p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 8 copyright ? 2004 rev. 1.0b, 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? notes production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. n n o o t t e e s s
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